MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
Products specifications
Rds On - Drain-Source Resistance | 380 mOhms |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 11.5 A |
Channel Mode | Enhancement |
Technology | Si |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Tradename | DTMOSIV |
Pd - Power Dissipation | 165 W |
Qg - Gate Charge | 23 nC |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |