MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
Products specifications
Id - Continuous Drain Current | 11.5 A |
Qg - Gate Charge | 25 nC |
Transistor Polarity | N-Channel |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Tradename | DTMOSIV |
Pd - Power Dissipation | 110 W |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 300 mOhms |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |