MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
Products specifications
Pd - Power Dissipation | 35 W |
Configuration | Single |
Technology | Si |
Rds On - Drain-Source Resistance | 300 mOhms |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Tradename | DTMOSIV |
Id - Continuous Drain Current | 11.5 A |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 25 nC |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |