MOSFET Power MOSFET N-Channel
Products specifications
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 350 mOhms |
Vgs - Gate-Source Voltage | 30 V |
Id - Continuous Drain Current | 11.1 A |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Pd - Power Dissipation | 100 W |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Qg - Gate Charge | 25 nC |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |