TK11A60D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 11A 600V 45W 1550pF 0.65

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MOSFET N-Ch MOS 11A 600V 45W 1550pF 0.65

Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	11 A
Technology	Si
Pd - Power Dissipation	45 W
Rds On - Drain-Source Resistance	650 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole

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Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	11 A
Technology	Si
Pd - Power Dissipation	45 W
Rds On - Drain-Source Resistance	650 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole