MOSFET N-Ch MOS 10A 40V 25W 410pF 520 mOhms
Products specifications
Vds - Drain-Source Breakdown Voltage | 500 V |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 25 W |
Id - Continuous Drain Current | 11 A |
Transistor Polarity | N-Channel |
Configuration | Single |
Rds On - Drain-Source Resistance | 520 mOhms |
Technology | Si |
Mounting Style | Through Hole |