MOSFET N-Ch 500V FET Vgss 30V 45W .45 ohm
Products specifications
Id - Continuous Drain Current | 11 A |
Configuration | Single |
Rds On - Drain-Source Resistance | 600 mOhms |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 45 W |
Technology | Si |