MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029
Products specifications
Id - Continuous Drain Current | 11 A |
Pd - Power Dissipation | 40 W |
Vds - Drain-Source Breakdown Voltage | 450 V |
Rds On - Drain-Source Resistance | 500 mOhms |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Qg - Gate Charge | 20 nC |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |