TK10V60W,LVQ

R 1.00

MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A

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MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	88.3 W
Rds On - Drain-Source Resistance	380 mOhms
Id - Continuous Drain Current	9.7 A
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Tradename	DTMOSIV
Transistor Polarity	N-Channel

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	88.3 W
Rds On - Drain-Source Resistance	380 mOhms
Id - Continuous Drain Current	9.7 A
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Tradename	DTMOSIV
Transistor Polarity	N-Channel