MOSFET N-Ch MOS 10A 40V 25W 410pF 0.028
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 40 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 25 W |
Packaging | Reel |
Id - Continuous Drain Current | 10 A |
Configuration | Single |
Rds On - Drain-Source Resistance | 28 mOhms |