MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
Products specifications
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 380 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 100 W |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Id - Continuous Drain Current | 9.7 A |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 20 nC |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |