MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
Products specifications
Technology | Si |
Rds On - Drain-Source Resistance | 460 mOhms |
Vds - Drain-Source Breakdown Voltage | 800 V |
Mounting Style | Through Hole |
Configuration | Single |
Qg - Gate Charge | 19 nC |
Pd - Power Dissipation | 40 W |
Tradename | DTMOSIV |
Id - Continuous Drain Current | 9.5 A |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |