MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Products specifications
Mounting Style | Through Hole |
Configuration | Single |
Technology | Si |
Id - Continuous Drain Current | 10 A |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 800 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Qg - Gate Charge | 46 nC |
Tradename | DTMOSIV |
Pd - Power Dissipation | 50 W |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 700 mOhms |