TK10A60E,S5X

R 1.00

MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS

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MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS

Products specifications

Number of Channels	1 Channel
Qg - Gate Charge	40 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	750 mOhms
Mounting Style	Through Hole
Pd - Power Dissipation	45 W
Tradename	DTMOSIV
Configuration	Single
Id - Continuous Drain Current	10 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Number of Channels	1 Channel
Qg - Gate Charge	40 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	750 mOhms
Mounting Style	Through Hole
Pd - Power Dissipation	45 W
Tradename	DTMOSIV
Configuration	Single
Id - Continuous Drain Current	10 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V