MOSFET MOSFET N-ch 600V 10A
Products specifications
Number of Channels | 1 Channel |
Qg - Gate Charge | 25 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 750 mOhms |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Tradename | DTMOSIV |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 45 W |
Id - Continuous Drain Current | 10 A |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |