MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
Products specifications
Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 1.9 mOhms |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Tradename | DTMOSIV |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 76 nC |
Id - Continuous Drain Current | 100 A |
Vds - Drain-Source Breakdown Voltage | 40 V |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Pd - Power Dissipation | 100 W |