MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
Products specifications
Rds On - Drain-Source Resistance | 15 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Tradename | DTMOSIV |
Pd - Power Dissipation | 797 W |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Qg - Gate Charge | 360 nC |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 100 A |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Configuration | Single |