MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
Products specifications
Id - Continuous Drain Current | 1 mA |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 1.9 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Tradename | DTMOSIV |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Technology | Si |