MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
Products specifications
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 100 A |
Technology | Si |
Qg - Gate Charge | 130 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 2.6 mOhms |
Tradename | DTMOSIV |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 45 W |