MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Products specifications
Vgs th - Gate-Source Threshold Voltage | 4 V |
Pd - Power Dissipation | 45 W |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 100 A |
Configuration | Single |
Tradename | DTMOSIV |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 2.2 mOhms |
Number of Channels | 1 Channel |
Qg - Gate Charge | 140 nC |
Transistor Polarity | N-Channel |
Technology | Si |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 60 V |