MOSFET Power MOSFET 57A 360W 650V
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Configuration | Single |
Pd - Power Dissipation | 360 W |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 40 mOhms |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 57 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Qg - Gate Charge | 105 nC |