MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 104 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 175 C |
Qg - Gate Charge | 19 nC |
Pd - Power Dissipation | 27 W |
Channel Mode | Enhancement |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 8 A |
Transistor Polarity | P-Channel |