MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112
Products specifications
Technology | Si |
Qg - Gate Charge | 156 nC |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 100 W |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 175 C |
Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 11.2 mOhms |