TJ60S04M3L(T6L1,NQ

R 1.00

MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063

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MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Rds On - Drain-Source Resistance	6.3 mOhms
Id - Continuous Drain Current	60 A
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Technology	Si
Pd - Power Dissipation	90 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Rds On - Drain-Source Resistance	6.3 mOhms
Id - Continuous Drain Current	60 A
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Technology	Si
Pd - Power Dissipation	90 W