MOSFETs Small Signal Mosfet
Lead Time: 168 Days
Products specifications
Configuration | Single |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Rds On - Drain-Source Resistance | 1.5 Ohms |
Id - Continuous Drain Current | 400 mA |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, Reel |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 0.39 nC |
Technology | Si |
Pd - Power Dissipation | 1 W |