MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
Products specifications
Vds - Drain-Source Breakdown Voltage | 20 V |
Rds On - Drain-Source Resistance | 157 mOhms |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 12 V |
Number of Channels | 2 Channel |
Technology | Si |
Configuration | Dual |
Id - Continuous Drain Current | 4 A |
Pd - Power Dissipation | 1 W |
Packaging | Cut Tape, MouseReel, Reel |