MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS
Products specifications
Vgs - Gate-Source Voltage | 8 V |
Packaging | Reel |
Pd - Power Dissipation | 1 W |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4 A |
Number of Channels | 2 Channel |
Configuration | Dual |
Transistor Polarity | P-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 242 mOhms |