MOSFET LowON Res MOSFET ID=-0.72A VDSS=-20V
Products specifications
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 150 mW |
Vds - Drain-Source Breakdown Voltage | 20 V |
Technology | Si |
Configuration | Dual |
Number of Channels | 2 Channel |
Vgs - Gate-Source Voltage | 8 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 1.76 nC |
Transistor Polarity | P-Channel |
Rds On - Drain-Source Resistance | 300 mOhms |
Id - Continuous Drain Current | 720 mA |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |