MOSFET Small Signal MOSFET
Products specifications
Id - Continuous Drain Current | 330 mA |
Vgs th - Gate-Source Threshold Voltage | 300 mV |
Transistor Polarity | P-Channel |
Rds On - Drain-Source Resistance | 3.6 Ohms |
Vgs - Gate-Source Voltage | 8 V |
Configuration | Dual |
Qg - Gate Charge | 1.2 nC |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 150 mW |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 20 V |
Number of Channels | 2 Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |