MOSFETs LowON Res MOSFET ID=-.1A VDSS=-30V
Lead Time: 128 Days
Products specifications
Minimum Operating Temperature | - |
Pd - Power Dissipation | 150 mW |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | P-Channel |
Technology | Si |
Configuration | Dual |
Id - Continuous Drain Current | 100 mA |
Number of Channels | 2 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.7 V |
Rds On - Drain-Source Resistance | 8 Ohms |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |