Channel Mode | Enhancement |
Id - Continuous Drain Current | 200 mA |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Dual |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Packaging | Reel |
Rds On - Drain-Source Resistance | 3.3 Ohms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 300 mW |