SSM6N7002KFU,LF

MOSFET Small-signal MOSFET 2in1 ESD Protected

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MOSFETs Small-signal MOSFET 2in1 ESD Protected

Products specifications

Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	300 mA
Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	500 mW
Rds On - Drain-Source Resistance	1.5 Ohms
Technology	Si
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	0.39 nC
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Configuration	Dual
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	1.1 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	300 mA
Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	500 mW
Rds On - Drain-Source Resistance	1.5 Ohms
Technology	Si
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	0.39 nC
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Configuration	Dual
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	1.1 V