MOSFETs Small-Signal MOSFET 2-in-1
Lead Time: 0 Days
Products specifications
Rds On - Drain-Source Resistance | 3.9 Ohms, 3.9 Ohms |
Configuration | Dual |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Number of Channels | 2 Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 4.5 V |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 170 mA |
Pd - Power Dissipation | 285 mW |
Technology | Si |
Qg - Gate Charge | 0.27 nC, 0.27 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |