MOSFETs ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
Lead Time: 0 Days
Products specifications
Number of Channels | 2 Channel |
Id - Continuous Drain Current | 200 mA |
Pd - Power Dissipation | 150 mW |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 2.1 Ohms |
Configuration | Dual |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |