MOSFETs LowON Res MOSFET ID=4A VDSS=30V
Lead Time: 0 Days
Products specifications
Pd - Power Dissipation | 1 W |
Rds On - Drain-Source Resistance | 84 mOhms |
Number of Channels | 2 Channel |
Packaging | Cut Tape, Reel |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 4 A |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 1.8 nC |
Technology | Si |
Configuration | Dual |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 12 V, - 8 V |