SSM6N67NU,LF

MOSFET LowON Res MOSFET ID=4A VDSS=30V

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MOSFETs LowON Res MOSFET ID=4A VDSS=30V
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Products specifications

Qg - Gate Charge	3.2 nC
Pd - Power Dissipation	1 W
Rds On - Drain-Source Resistance	39.1 mOhms
Configuration	Dual
Vgs - Gate-Source Voltage	12 V, - 8 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	4 A

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Products specifications

Qg - Gate Charge	3.2 nC
Pd - Power Dissipation	1 W
Rds On - Drain-Source Resistance	39.1 mOhms
Configuration	Dual
Vgs - Gate-Source Voltage	12 V, - 8 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	4 A