SSM6N61NU,LF

MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A

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MOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A
Lead Time: 40 Days

Products specifications

Id - Continuous Drain Current	4 A
Technology	Si
Pd - Power Dissipation	2 W
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	20 V
Rds On - Drain-Source Resistance	108 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	3.6 nC
Vgs th - Gate-Source Threshold Voltage	400 mV
Transistor Polarity	N-Channel
Configuration	Dual
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement

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Products specifications

Id - Continuous Drain Current	4 A
Technology	Si
Pd - Power Dissipation	2 W
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	20 V
Rds On - Drain-Source Resistance	108 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	3.6 nC
Vgs th - Gate-Source Threshold Voltage	400 mV
Transistor Polarity	N-Channel
Configuration	Dual
Number of Channels	2 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement