SSM6N58NU,LF

MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1

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R 5.36

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R 2.85

R 2.64

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MOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1
Lead Time: 84 Days

Products specifications

Id - Continuous Drain Current	4 A
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	1 W
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	112 mOhms

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Products specifications

Id - Continuous Drain Current	4 A
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	1 W
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	112 mOhms