SSM6N57NU,LF

MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS

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MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS
Lead Time: 49 Days

Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	4 A
Vgs - Gate-Source Voltage	12 V
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Configuration	Dual
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Pd - Power Dissipation	2 W
Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	82 mOhms
Qg - Gate Charge	3.2 nC

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Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	4 A
Vgs - Gate-Source Voltage	12 V
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Configuration	Dual
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Pd - Power Dissipation	2 W
Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	82 mOhms
Qg - Gate Charge	3.2 nC