MOSFETs Small-signal MOSFET N-Channel
Lead Time: 0 Days
Products specifications
Number of Channels | 2 Channel |
Pd - Power Dissipation | 250 mW |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Qg - Gate Charge | 1 nC, 1 nC |
Id - Continuous Drain Current | 800 mA |
Technology | Si |
Rds On - Drain-Source Resistance | 235 mOhms, 235 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 4.5 V |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Transistor Polarity | N-Channel |
Configuration | Dual |