SSM6N55NU,LF

MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD

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MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
Lead Time: 112 Days

Products specifications

Pd - Power Dissipation	1 W
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	2.5 nC
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Rds On - Drain-Source Resistance	64 mOhms
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	4 A

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Products specifications

Pd - Power Dissipation	1 W
Packaging	Cut Tape, MouseReel, Reel
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	2.5 nC
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Rds On - Drain-Source Resistance	64 mOhms
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	4 A