SSM6N43FU,LF

MOSFET Small-signal MOSFET

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MOSFETs Small-signal MOSFET
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Products specifications

Pd - Power Dissipation	200 mW
Rds On - Drain-Source Resistance	460 mOhms, 460 mOhms
Configuration	Dual
Qg - Gate Charge	1.23 nC, 1.23 nC
Transistor Polarity	N-Channel
Id - Continuous Drain Current	500 mA
Vgs th - Gate-Source Threshold Voltage	350 mV
Vds - Drain-Source Breakdown Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Number of Channels	2 Channel
Technology	Si

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Products specifications

Pd - Power Dissipation	200 mW
Rds On - Drain-Source Resistance	460 mOhms, 460 mOhms
Configuration	Dual
Qg - Gate Charge	1.23 nC, 1.23 nC
Transistor Polarity	N-Channel
Id - Continuous Drain Current	500 mA
Vgs th - Gate-Source Threshold Voltage	350 mV
Vds - Drain-Source Breakdown Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Number of Channels	2 Channel
Technology	Si