MOSFET LowON Res MOSFET ID=1.6A VDSS=20V
Products specifications
Channel Mode | Enhancement |
Number of Channels | 2 Channel |
Id - Continuous Drain Current | 1.6 A |
Transistor Polarity | N-Channel |
Technology | Si |
Qg - Gate Charge | 7.5 nC, 7.5 nC |
Vgs th - Gate-Source Threshold Voltage | 350 mV |
Rds On - Drain-Source Resistance | 87 mOhms, 87 mOhms |
Pd - Power Dissipation | 500 mW |
Vds - Drain-Source Breakdown Voltage | 20 V |
Configuration | Dual |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |