SSM6N37FU,LF

MOSFET Small-signal MOSFET ID=0.25A VDSS=20V

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MOSFETs Small-signal MOSFET ID=0.25A VDSS=20V
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Products specifications

Vgs th - Gate-Source Threshold Voltage	350 mV
Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	1.65 Ohms
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	250 mA
Configuration	Single
Technology	Si
Vds - Drain-Source Breakdown Voltage	20 V
Transistor Polarity	N-Channel
Packaging	Cut Tape, Reel
Pd - Power Dissipation	300 mW

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Products specifications

Vgs th - Gate-Source Threshold Voltage	350 mV
Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	1.65 Ohms
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	250 mA
Configuration	Single
Technology	Si
Vds - Drain-Source Breakdown Voltage	20 V
Transistor Polarity	N-Channel
Packaging	Cut Tape, Reel
Pd - Power Dissipation	300 mW