SSM6N35FE,LM

MOSFET Small Signal MOSFET

Availability: 2085 in stock

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R 9.10

R 5.52

R 2.58

R 2.10

R 1.72

R 1.29

R 1.24

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MOSFETs Small Signal MOSFET
Lead Time: 66 Days

Products specifications

Pd - Power Dissipation	150 mW
Technology	Si
Vgs th - Gate-Source Threshold Voltage	400 mV
Id - Continuous Drain Current	180 mA
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	20 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	20 Ohms, 20 Ohms
Channel Mode	Enhancement
Configuration	Dual
Transistor Polarity	N-Channel

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Products specifications

Pd - Power Dissipation	150 mW
Technology	Si
Vgs th - Gate-Source Threshold Voltage	400 mV
Id - Continuous Drain Current	180 mA
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	20 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	20 Ohms, 20 Ohms
Channel Mode	Enhancement
Configuration	Dual
Transistor Polarity	N-Channel