SSM6N35AFU,LF

MOSFET LowON Res MOSFET ID=.25A VDSS=20V

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MOSFETs LowON Res MOSFET ID=.25A VDSS=20V

Products specifications

Configuration	Dual
Qg - Gate Charge	340 pC, 340 pC
Rds On - Drain-Source Resistance	750 mOhms, 750 mOhms
Id - Continuous Drain Current	250 mA
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	350 mV
Minimum Operating Temperature	-
Pd - Power Dissipation	285 mW
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	2 Channel

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Products specifications

Configuration	Dual
Qg - Gate Charge	340 pC, 340 pC
Rds On - Drain-Source Resistance	750 mOhms, 750 mOhms
Id - Continuous Drain Current	250 mA
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	350 mV
Minimum Operating Temperature	-
Pd - Power Dissipation	285 mW
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	2 Channel