SSM6N35AFE,LF

MOSFET LowON Res MOSFET ID=.25A VDSS=20V

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MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
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Products specifications

Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	350 mV
Technology	Si
Minimum Operating Temperature	-
Qg - Gate Charge	340 pC, 340 pC
Id - Continuous Drain Current	250 mA
Rds On - Drain-Source Resistance	750 mOhms, 750 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Configuration	Dual
Transistor Polarity	N-Channel

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Products specifications

Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	350 mV
Technology	Si
Minimum Operating Temperature	-
Qg - Gate Charge	340 pC, 340 pC
Id - Continuous Drain Current	250 mA
Rds On - Drain-Source Resistance	750 mOhms, 750 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Configuration	Dual
Transistor Polarity	N-Channel