SSM6N357R,LF

MOSFET LowON Res MOSFET ID=.65A VDSS=60V

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MOSFETs LowON Res MOSFET ID=.65A VDSS=60V
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	12 V
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Transistor Polarity	N-Channel
Id - Continuous Drain Current	650 mA
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	1.5 nC
Number of Channels	2 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	1 W
Vgs th - Gate-Source Threshold Voltage	1.3 V
Rds On - Drain-Source Resistance	1.8 Ohms
Packaging	Cut Tape, Reel
Technology	Si

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Products specifications

Vgs - Gate-Source Voltage	12 V
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Transistor Polarity	N-Channel
Id - Continuous Drain Current	650 mA
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	1.5 nC
Number of Channels	2 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	1 W
Vgs th - Gate-Source Threshold Voltage	1.3 V
Rds On - Drain-Source Resistance	1.8 Ohms
Packaging	Cut Tape, Reel
Technology	Si