SSM6N16FUTE85LF

MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1

Availability: 10300 in stock

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R 6.19

R 3.90

R 2.07

R 1.91

R 1.62

R 1.54

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MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
Lead Time: 102 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	200 mW
Number of Channels	2 Channel
Configuration	Dual
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	5.2 Ohms
Vgs th - Gate-Source Threshold Voltage	1.1 V
Id - Continuous Drain Current	100 mA

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Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	200 mW
Number of Channels	2 Channel
Configuration	Dual
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	5.2 Ohms
Vgs th - Gate-Source Threshold Voltage	1.1 V
Id - Continuous Drain Current	100 mA