MOSFET Dual N-ch 30V 0.1A
Products specifications
Configuration | Dual |
Rds On - Drain-Source Resistance | 4 Ohms |
Transistor Polarity | N-Channel |
Packaging | Reel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 100 mA |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Technology | Si |
Number of Channels | 2 Channel |
Pd - Power Dissipation | 150 mW |